Improved inverse class-E matching network for microwave high power amplifiers

authored by: Mohamed Gamai El Din, Bernd Geck, H. Eul
Abstract: This paper presets a 8.5 W GaN inverse class-E power amplifier using an output matching network suitable for high power applications. The presented output matching network overcomes several problems i. The original implementation. First a transmission line stub is used directly at the transistor drain to compensate for the drain source capacitance, secon. The lumped inductor i. The original implementation is replaced by a short transmission line, which makes it suitable for high power amplifiers. The designed GaN inverse class-E amplifier achieves a maximum drain efficiency of 77 % with output power of 39 dBm at a drain supply voltage of 35 V. Additionally through varyin. The supply voltag. The presented amplifier gives a drain efficiency greater than 70 % over an 8 dB dynamic range.
Organisation(s): Institute of Microwave and Wireless Systems
Type: Conference contribution
Pages: 391-394
No. of pages: 4
Publication date: 2009
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Hardware and Architecture, Control and Systems Engineering, Electrical and Electronic Engineering
Electronic version(s): https://doi.org/10.1109/ICECS.2009.5410908 (Access: Closed)
: Details in the research portal "Research@Leibniz University"

BibTeX

@inproceedings{e14ece54db5049a8874d23a7f021ea96,
title = "Improved inverse class-E matching network for microwave high power amplifiers",
abstract = "This paper presets a 8.5 W GaN inverse class-E power amplifier using an output matching network suitable for high power applications. The presented output matching network overcomes several problems i. The original implementation. First a transmission line stub is used directly at the transistor drain to compensate for the drain source capacitance, secon. The lumped inductor i. The original implementation is replaced by a short transmission line, which makes it suitable for high power amplifiers. The designed GaN inverse class-E amplifier achieves a maximum drain efficiency of 77 % with output power of 39 dBm at a drain supply voltage of 35 V. Additionally through varyin. The supply voltag. The presented amplifier gives a drain efficiency greater than 70 % over an 8 dB dynamic range.",
keywords = "GaN, Inverse class-E, Power amplifiers",
author = "{El Din}, {Mohamed Gamai} and Bernd Geck and H. Eul",
year = "2009",
doi = "10.1109/ICECS.2009.5410908",
language = "English",
isbn = "9781424450916",
series = "2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009",
pages = "391--394",
booktitle = "2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009",
note = "2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009 ; Conference date: 13-12-2009 Through 16-12-2009",
}