Improved inverse class-E matching network for microwave high power amplifiers
- verfasst von
- Mohamed Gamai El Din, Bernd Geck, H. Eul
- Abstract
This paper presets a 8.5 W GaN inverse class-E power amplifier using an output matching network suitable for high power applications. The presented output matching network overcomes several problems i. The original implementation. First a transmission line stub is used directly at the transistor drain to compensate for the drain source capacitance, secon. The lumped inductor i. The original implementation is replaced by a short transmission line, which makes it suitable for high power amplifiers. The designed GaN inverse class-E amplifier achieves a maximum drain efficiency of 77 % with output power of 39 dBm at a drain supply voltage of 35 V. Additionally through varyin. The supply voltag. The presented amplifier gives a drain efficiency greater than 70 % over an 8 dB dynamic range.
- Organisationseinheit(en)
-
Institut für Hochfrequenztechnik und Funksysteme
- Typ
- Aufsatz in Konferenzband
- Seiten
- 391-394
- Anzahl der Seiten
- 4
- Publikationsdatum
- 2009
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Hardware und Architektur, Steuerungs- und Systemtechnik, Elektrotechnik und Elektronik
- Elektronische Version(en)
-
https://doi.org/10.1109/ICECS.2009.5410908 (Zugang:
Geschlossen)
