In situ waveform measurement approach within an inverse class F GaN power amplifier
- authored by
- Steffen Probst, Bernd Geck
- Abstract
In this contribution a gallium nitride (GaN) based inverse class F (F-1) power amplifier with in situ waveform measurement capability is presented. Which the measurement approach the high frequency time domain voltages and currents in a reference plane can be measured directly in the circuit. Therefore, a directional coupler is integrated in the output matching network of the F-1 power amplifier. With this measurement results, a more in-depth investigation of the F-1 power amplifier can be carried out under operational conditions. Also it is a suitable approach for describing the non-linear behavior of RF circuits under operational conditions.
- Organisation(s)
-
Institute of Microwave and Wireless Systems
- Type
- Conference contribution
- Publication date
- 16.11.2015
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Hardware and Architecture, Electrical and Electronic Engineering
- Electronic version(s)
-
https://doi.org/10.1109/INMMIC.2015.7330360 (Access:
Closed)
-
Details in the research portal "Research@Leibniz University"