In situ waveform measurement approach within an inverse class F GaN power amplifier

authored by
Steffen Probst, Bernd Geck
Abstract

In this contribution a gallium nitride (GaN) based inverse class F (F-1) power amplifier with in situ waveform measurement capability is presented. Which the measurement approach the high frequency time domain voltages and currents in a reference plane can be measured directly in the circuit. Therefore, a directional coupler is integrated in the output matching network of the F-1 power amplifier. With this measurement results, a more in-depth investigation of the F-1 power amplifier can be carried out under operational conditions. Also it is a suitable approach for describing the non-linear behavior of RF circuits under operational conditions.

Organisation(s)
Institute of Microwave and Wireless Systems
Type
Conference contribution
Publication date
16.11.2015
Publication status
Published
Peer reviewed
Yes
ASJC Scopus subject areas
Hardware and Architecture, Electrical and Electronic Engineering
Electronic version(s)
https://doi.org/10.1109/INMMIC.2015.7330360 (Access: Closed)
 

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