In situ waveform measurement approach within an inverse class F GaN power amplifier
- verfasst von
- Steffen Probst, Bernd Geck
- Abstract
In this contribution a gallium nitride (GaN) based inverse class F (F-1) power amplifier with in situ waveform measurement capability is presented. Which the measurement approach the high frequency time domain voltages and currents in a reference plane can be measured directly in the circuit. Therefore, a directional coupler is integrated in the output matching network of the F-1 power amplifier. With this measurement results, a more in-depth investigation of the F-1 power amplifier can be carried out under operational conditions. Also it is a suitable approach for describing the non-linear behavior of RF circuits under operational conditions.
- Organisationseinheit(en)
-
Institut für Hochfrequenztechnik und Funksysteme
- Typ
- Aufsatz in Konferenzband
- Publikationsdatum
- 16.11.2015
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Hardware und Architektur, Elektrotechnik und Elektronik
- Elektronische Version(en)
-
https://doi.org/10.1109/INMMIC.2015.7330360 (Zugang:
Geschlossen)
