Design of a Linearized and Efficient Doherty Amplifier for C-Band Applications

authored by
Steffen Probst, Timo Martinelli, Steffen Seewald, Bernd Geck, Dirk Manteuffel
Abstract

In this contribution a 44.5 dBm gallium nitride (GaN) based Doherty amplifier for a center frequency of 4900 MHz is presented. The developed Doherty amplifier uses an unsymmetrical power division and offset lines for optimization of the load modulation over the dynamic output range. Various drain supply voltages of the carrier and the peak amplifier are used to optimize the gain. Furthermore, the error vector magnitude (EVM) and the adjacent channel leakage ratio (ACLR) are reduced by using a memoryless digital predistortion (DPD) based on lookup table (LUT) model. All this design strategies improve the linearity of the Doherty amplifier.

Organisation(s)
Institute of Microwave and Wireless Systems
Type
Conference contribution
Pages
121-124
No. of pages
4
Publication date
21.12.2017
Publication status
Published
Peer reviewed
Yes
ASJC Scopus subject areas
Electronic, Optical and Magnetic Materials, Computer Networks and Communications, Electrical and Electronic Engineering
Electronic version(s)
https://doi.org/10.23919/EuMIC.2017.8230675 (Access: Closed)
 

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