Investigation of the dynamic load modulation of an inverse class-F power amplifier with an adaptive matching network

authored by: Steffen Probst, Lukas Berkelmann, Bernard Lüers, Bernd Geck, Dirk Manteuffel
Abstract: This paper presents a 10 Watt gallium nitride (GaN) based inverse class-F power amplifier with dynamic load modulation. The designed power amplifier uses an adaptive output matching network, which is realized using MEMS switches (micro electro mechanical systems), for the enhancement of the power added efficiency over the dynamic output range. Through the load modulation achieved by the adaptive matching network an efficiency enhancement of approximately 30 pp (percentage point) at 10-dB-back-off at the drain of the transistor is achieved compared to a power amplifier without load modulation. Through the use of an in situ measurement approach in-depth investigations of the working principle of the realized amplifier and adaptive matching network are possible.
Organisation(s): Institute of Microwave and Wireless Systems
Type: Conference contribution
Pages: 20-22
No. of pages: 3
Publication date: 08.03.2018
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Computer Networks and Communications, Instrumentation
Electronic version(s): https://doi.org/10.1109/pawr.2018.8310056 (Access: Closed)
: Details in the research portal "Research@Leibniz University"

BibTeX

@inproceedings{06d02ed5a5af4c5f915ecd0f0a859517,
title = "Investigation of the dynamic load modulation of an inverse class-F power amplifier with an adaptive matching network",
abstract = "This paper presents a 10 Watt gallium nitride (GaN) based inverse class-F power amplifier with dynamic load modulation. The designed power amplifier uses an adaptive output matching network, which is realized using MEMS switches (micro electro mechanical systems), for the enhancement of the power added efficiency over the dynamic output range. Through the load modulation achieved by the adaptive matching network an efficiency enhancement of approximately 30 pp (percentage point) at 10-dB-back-off at the drain of the transistor is achieved compared to a power amplifier without load modulation. Through the use of an in situ measurement approach in-depth investigations of the working principle of the realized amplifier and adaptive matching network are possible.",
keywords = "Adaptive matching network, efficiency enhancement, inverse class-F, load modulation, power amplifier, time domain measurement",
author = "Steffen Probst and Lukas Berkelmann and Bernard L{\"u}ers and Bernd Geck and Dirk Manteuffel",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",
year = "2018",
month = mar,
day = "8",
doi = "10.1109/pawr.2018.8310056",
language = "English",
isbn = "9781538612903",
pages = "20--22",
booktitle = "PAWR 2018 - Proceedings 2018 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications",
}