Efficiency enhancement of class-F GaN power amplifiers using load modulation
- verfasst von
- Mohamed Gamal El Din, Somayeh Mohammadifard, Bernd Geck, Ilona Rolfes
- Abstract
In this work a 10W GaN based class-F amplifier at 1GHz is presented. The presented amplifier uses load modulation principle to achieve high efficiency over 11dB output dynamic range. The output matching network is an L matching network with a tunable inductor and a tunable capacitor. The tunable inductor is based on a λ/4 impedance inverter and a switchable capacitor bank. The tunable inductor presents a short circuit for the second harmonic and an open circuit to the third harmonic; additionally together with the tunable capacitor they present the optimum working impedance for the transistor. The designed amplifier has a power added efficiency of 82% at an output power of 40 dBm and through using adaptive matching it can achieve a PAE of 60% at an output power of 29dBm, in contrast to a PAE of only 22% in the case of using a fixed matching network.
- Organisationseinheit(en)
-
Institut für Hochfrequenztechnik und Funksysteme
- Typ
- Aufsatz in Konferenzband
- Seiten
- 114-117
- Anzahl der Seiten
- 4
- Publikationsdatum
- 2010
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Elektrotechnik und Elektronik
